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Crystal Material

Single Crystal Gallium Arsenide, VGF / LECgrown, 高純單晶

Crystal Orientation

(1 0 0) / (1 1 1)

Doping

Undoped

Zn

Si / Te

Diameter

50~150mm ± 0.25mm（2"、 3"、 4"、6"）

Thickness

350 ± 25um / 550 ± 25um / 625 ± 25um

（ 100 ）or（111） α ⁰ ±β ⁰, off angle α and accuracy β upon request

Resistivity

(1-30)x10 ⁷ Ω.cm

(1-10)x10 ^-3 Ω.cm

Mobility Ratio

N / A

doping content

N / A

(0.1-3.0)×10 ¹⁸ /cm³

Etch Pit Density

≤ 5·10³ cm^-2

≤ 7·10 ⁴cm^-2

≤ 5·10² cm^-2

(0-1-1)±0.5deg, 16 ±1.0mm /22±1.0mm/32.5±1.0mm

(0-1 1) )±5.0 deg, 8 ±1.0mm / 11±1.0mm/ 18±1.0mm

Front surface

Polished in Epi-ready Prime grade, 外延生長級拋光

Back Surface

Polished / Lapping or Etched, 拋光 / 研磨或腐蝕

Epi-ready

Yes